Line Edge Roughness (LER) correlation and dielectric reliability with Spacer-Defined Double Patterning (SDDP) at 20nm half pitch | Semantic Scholar
Intrinsically stretchable carbon nanotube synaptic transistors with associative learning ability and mechanical deformation response - ScienceDirect
Figure 1 from Line Edge Roughness (LER) correlation and dielectric reliability with Spacer-Defined Double Patterning (SDDP) at 20nm half pitch | Semantic Scholar
Materials | Free Full-Text | Superhydrophobic Anticorrosive Phosphonate–Siloxane Films Formed on Zinc with Different Surface Morphology | HTML
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Markets and products - Annual report ASM International
RSC_TC_vol_iss_D1TC90080C 5027..5035
Mimicking biological synaptic plasticity with a leaky charge-trap FinFET - Journal of Materials Chemistry C (RSC Publishing)
Figure 1 from Integration of 20nm half pitch single damascene copper trenches by spacer-defined double patterning (SDDP) on metal hard mask (MHM) | Semantic Scholar
Intrinsically stretchable carbon nanotube synaptic transistors with associative learning ability and mechanical deformation response - ScienceDirect
Stretchable organic optoelectronic sensorimotor synapse | Science Advances
Line Edge Roughness (LER) correlation and dielectric reliability with Spacer-Defined Double Patterning (SDDP) at 20nm half pitch | Semantic Scholar
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Markets and products - Annual report ASM International
HIGH PRODUCTIVITY SOLUTIONS FOR ADVANCED WAFER PROCESSING WITH NEW MATERIALS
Materials | Free Full-Text | Superhydrophobic Anticorrosive Phosphonate–Siloxane Films Formed on Zinc with Different Surface Morphology | HTML
Particulate Matter Sensor- Final Project ECEN 2440 - Hackster.io
Tuning Ambipolarity of the Conjugated Polymer Channel Layers of Floating‐Gate Free Transistors: From Volatile Memories to Artificial Synapses - Yang - Advanced Science - Wiley Online Library
Frontiers | Low-power flexible organic memristor based on PEDOT:PSS/pentacene heterojunction for artificial synapse
Flexible Artificial Sensory Systems Based on Neuromorphic Devices | ACS Nano
Nanomaterials | Free Full-Text | Artificial Synapse Consisted of TiSbTe/SiCx:H Memristor with Ultra-high Uniformity for Neuromorphic Computing | HTML
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Markets and products - Annual report ASM International
ENABLING ADVANCED CHIP MANUFACTURING WITH NEW MATERIALS
Mixed-halide perovskite for ultrasensitive two-terminal artificial synaptic devices - Materials Chemistry Frontiers (RSC Publishing) DOI:10.1039/C9QM00061E
Artificial synapse based on MoO
