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SiC Schottky Diodes
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML
SiC Schottky Diode Device Design: Characterizing Performance & Reliability
Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode
Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model - Li - 2020 - IET Power Electronics - Wiley Online Library
Avalanche Ruggedness of SiC MPS Diodes Under Repetitive Unclamped-Inductive-Switching Stress - Technical Articles
4.4.3.2 MPS Diode Simulation
1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability
Design and Optimization of Silicon Carbide Schottky Diodes - Power Electronics News
Basic unit cell of a MPS diode | Download Scientific Diagram
SiC Schottky Diode Device Design: Characterizing Performance & Reliability
4.4.3.1 MPS Diode Structure
1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability
Advantages of the 1200 V SiC Schottky Diode with MPS Design - Technical Articles
Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes | SpringerLink
The Wolfspeed MPS Diode Advantage - YouTube
Cut a) and top view b) of the structure of an MPS-Diode. In b) Black:... | Download Scientific Diagram
Energies | Free Full-Text | Promise and Challenges of High-Voltage SiC Bipolar Power Devices | HTML
Improved JBS structure to reduce the leakage current and increase the surge current capability | Toshiba Electronic Devices & Storage Corporation | Americas – United States
Design and Optimization of Silicon Carbide Schottky Diodes - Power Electronics News
Figure 1 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation | Semantic Scholar
Advantages of the 1200V SiC Schottky Diode with MPS Design - Electronics Maker
Advantages of the 1200 V SiC Schottky Diode with MPS Design