PDF) A general simulation procedure for the electrical characteristics of Metal-Insulator-Semiconductor tunnel structures
ATE Central - Semiconductors on NSM
Polarization studies of the photoelectric properties of II–IV–V2- semiconductor-compound–electrolyte systems
The calculated Ioffe-Regel critical density of Si- MOSFET as a function... | Download Scientific Diagram
NSM Archive - Diamond (C) - Band structure and carrier concentration
SpecialIssue
Temperature dependence of the threshold current of QW lasers
Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric
Handbook Series on Semiconductor Parameters : FRONT MATTER
Handbook Series on Semiconductor Parameters
Semiconductor Parameters | PDF | Band Gap | Electrical Resistivity And Conductivity
Universal analytical approximation of the carrier mobility in semiconductors for a wide range of temperatures and doping densiti
New Semiconductor Materials. Characteristics and Properties
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Structural and Optical Properties of Alternately-Strained ZnSxSe1−x/CdSe Superlattices with E ective Band-Gap 2.5 2.6 eV
Effect of uniaxial deformation on electrophysical parameters of 6<Emphasis Type="Italic">H</Emphasis>-SiC
Heterojunctions based on Silicon Carbide
On the Band Structure of Ultrathin Layer Semiconductor Superlattices
ECE 4570 Electronic Device Fundamentals
REVIEW Chalcogenide passivation of III–V semiconductor surfaces
A. F. Ioffe Semiconductor Thermoelements And Thermoelectric Cooling Infosearch ( 1957)
ATE Central - Semiconductors on NSM
Optical trapping with Bessel beams generated from semiconductor lasers
