Interface trap distribution, deduced from the high-low frequency C-V... | Download Scientific Diagram
Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in -Ga2O3 Field-Effect Transistors
Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods: Journal of Applied Physics: Vol 112, No 6
The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky Diodes | Semantic Scholar
Interface Trap - an overview | ScienceDirect Topics
Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode | SpringerLink
Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al 2 O 3 - RSC Advances (RSC Publishing) DOI:10.1039/C6RA27190A
Reducing Interface Traps with High Density Hydrogen Treatment to Increase Passivated Emitter Rear Contact Cell Efficiency | Nanoscale Research Letters | Full Text
The effect of the interface trap density on the subthreshold slope of... | Download Scientific Diagram
PDF) Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes | İlke Taşçıoğlu - Academia.edu
Comparison of methods to quantify interface trap densities at dielectric/IIIV semiconductor interfaces
Reducing Interface Traps with High Density Hydrogen Treatment to Increase Passivated Emitter Rear Contact Cell Efficiency | Nanoscale Research Letters | Full Text
Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes | Scientific.Net
Figure 4 from Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques | Semantic Scholar
Nanomaterials | Free Full-Text | Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga2O3 Field-Effect Transistors | HTML
PDF) Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods | Omer Nur - Academia.edu
Interface trap characterization and electrical properties of Au-ZnO nanorod Schottky diodes by conductance and capacitance methods: Journal of Applied Physics: Vol 112, No 6
Reduction of interface traps between poly-Si and SiO2 layers through the dielectric recovery effect during delayed pulse bias st
OXIDE AND INTERFACE TRAPPED CHARGES, OXIDE THICKNESS - ppt video online download
Method of evaluating interface traps in Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN high electron mobility transistors
The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky Diodes
Method of evaluating interface traps in Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN high electron mobility transistors
Interface trap density as a function of the energy level depth below... | Download Scientific Diagram
Interface Trap - an overview | ScienceDirect Topics
Analysis of interface trap states at Schottky diode by using equivalent circuit modeling: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena: Vol 25, No 1