![Measured and simulated I-V curves of Ni/GeOx/ nc-TiO 2 /TaON/TaN RRAM... | Download Scientific Diagram Measured and simulated I-V curves of Ni/GeOx/ nc-TiO 2 /TaON/TaN RRAM... | Download Scientific Diagram](https://www.researchgate.net/publication/252056870/figure/fig3/AS:667832853483531@1536235168480/Measured-and-simulated-I-V-curves-of-Ni-GeOx-nc-TiO-2-TaON-TaN-RRAM-devices-at-HRS-and.png)
Measured and simulated I-V curves of Ni/GeOx/ nc-TiO 2 /TaON/TaN RRAM... | Download Scientific Diagram
![Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.8b00071/asset/images/medium/el-2018-00071w_0002.gif)
Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials
![Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.8b00071/asset/images/medium/el-2018-00071w_0003.gif)
Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials
![Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.8b00071/asset/images/medium/el-2018-00071w_0001.gif)
Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials
![Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process | ACS Applied Electronic Materials](https://pubs.acs.org/cms/10.1021/acsaelm.8b00071/asset/images/medium/el-2018-00071w_0004.gif)